SI9936DY |
RFQ for SI9936DY Required Field |
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| Technical/Catalog Information | SI9936DY |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 5A |
| Rds On (Max) @ Id, Vgs | 50 mOhm @ 5A, 10V |
| Input Capacitance (Ciss) @ Vds | 525pF @ 15V |
| Power - Max | 900mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 35nC @ 10V |
| Package / Case | 8-SOIC |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SI9936DY SI9936DY |
| Product | Manufacturers | Pack | D/C |
| SI9936DY | - | N/A | N/A |
Typical Application |
Features |
| · DC to DC convertors· DC motor control· Lithium-ion battery applications· Notebook PC· Portable equipment applications. | · Low on-state resistance· Fast switching· TrenchMOS™ technology |
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VDS | drain-source voltage (DC) | Tj = 25 to 150 °C | - | 30 | V |
| VGS | gate-source voltage (DC) | - | ±20 | V | |
| ID | drain current (DC) | Tamb = 25 °C; pulsed; tp 10 s; Figure 2 and 3 | - | 5 | A |
| Tamb = 70 °C; pulsed; tp 10 s; Figure 2 | 4 | ||||
| IDM | peak drain current | Tamb = 25 °C; pulsed; tp 10 ms; Figure 3 | - | 40 | A |
| Ptot | total power dissipation | Tamb = 25 °C; pulsed; tp 10 s; Figure 1 | - | 2 | W |
| Tamb = 70 °C; pulsed; tp 10 s; Figure 1 | 1.3 | ||||
| Tstg | storage temperature | -55 | +150 | °C | |
| Tj | operating junction temperature | -55 | +15 | °C | |
| Source-drain diode | |||||
| IS | source (diode forward) current (DC) Tamb = 25 °C | - | 1.3 | A | |
